3.8-MV_cm Breakdown β-Ga2O3 MOSFETs

A Sn-doped (100) β-Ga2O3 epitaxial layer was grown via metal–organic vapor phase epitaxy onto a singlecrystal, Mg-doped semi-insulating (100) β-Ga2O3 substrate. Ga2O3-based metal–oxide–semiconductor field-effect transistors with a 2-μm gate length (LG), 3.4-μm source–drain spacing (LSD), and 0.6-μm gate–drain spacing (LGD) were fabricated and characterized. Devices were observed to hold a gate-to-drain voltage of 230 V in the OFF-state. The gateto- drain electric field corresponds to 3.8 MV/cm, which is the highest reported for any transistor and surpassing bulk GaN and SiC theoretical limits.

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