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1. A Graphene-Based Hot Electron Transistor
  
  标签：GrapheneBased Hot Electron Transistor
  
  experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call graphene base transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 104.
  
  下载次数 0次资源类型应用文档上传时间 2014-06-10
2. Vertical Graphene-Base Hot-Electron Transistor
  
  标签：Vertical GrapheneBase HotElectron Transistor
  
  demonstrate vertical graphene-base hotelectron transistors (GB-HETs) with a variety of structures and material parameters. Our GB-HETs exhibit a current saturation with a high current on?off ratio (>105), which results from both the vertical transport of hot electrons across the ultrathin graphene base and the filtering of hot electrons through a built-in energy barrier. The influences of the materials and their thicknesses used for the tunneling and filtering barriers on the common-base current gain α are studied. The optimization of the SiO2 thickness and using HfO2 as the filtering barrier significantly improves the common-base current gain α by more than 2 orders of magnitude. The results demonstrate that GB-HETs have a great potential for highfrequency, high-speed, and high-density integrated circuits. KEYWORDS: Graphene, hot electron transistor, graphene base,
  
  下载次数 1次资源类型应用文档上传时间 2014-06-10
3. Graphene Integrated Circuit
  
  标签：Graphene Integrated Circuit
  
  A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance.
  
  下载次数 0次资源类型应用文档上传时间 2014-06-10
4. Transistors Graphene
  
  标签：Transistors Graphene
  
  Graphene is the thinnest electronic material, merely one atom thick, with very high carrier mobilities, and therefore it should enable transistors operating at very high frequencies (1–3). Here, we present field-effect transistors (FETs) fabricated on a 2-inch graphene wafer (Fig. 1A) with a cutoff frequency in the radio frequency range, as high as 100 GHz.
  
  下载次数 0次资源类型应用文档上传时间 2014-06-10