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美国Everspin半导体中国区指定代理 MRAM(非易失性存储器)
我司是美国Everspin半导体中国区指定代理.Everspin MRAM是一种具有革命性的存储器,其原理是利用电子自旋的磁性结构,来提供不会产生损耗的非挥发特性。Everspin MRAM可在集成了硅电路的磁性材料中存储信息,以在单一、可无限使用的组件中提供SRAM的速度以及闪存的非挥发特性。
主要代理MRAM(非易失性存储器),可完全替代SRAM,NvSRAM,F-RAM,EEPROM,BBSRAM,FLASH容量有:
串口:256Kbit,1Mbit,4Mbit
型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR25H256 256Kb 32K*8 40MHz 2.7V~3.6V C,M 8-DFNMR25H10 1Mb 128K*8 40MHz 2.7V~3.6V C,M 8-DFNMR25H40 4Mb 512K*8 40MHz 2.7V~3.6V C,M 8-DFN,8-DIP
并口(*8bit):256Kbit,1Mbit,4Mbit型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR256A08B 256Kb 32K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR0A08B 1Mb 128K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR0D08B 1Mb 128K*8 45ns 2.7V~3.6V,I/O 1.8V Blank 48-BGAMR2A08A 4Mb 512K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR4A08B 16Mb 2Mb*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGA
并口(*16bit):1Mbit,4Mbit,16Mbit型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR0A16A 1Mb 64K*16 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR2A16A 4Mb 256K*16 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR4A16B 16Mb 1Mb*16 35ns 2.7V~3.6V C,M 54TSOP,48-BGA
我司产品可完全替代FRAM(铁电存储器),NV-SRAM,MRAM,如有需要请随时和我们联系. 如以下型号:
CY14B064I CY14ME064 CY14B101KA CY14B108NCY14B064P CY14B101Q CY14B101LA CY14B256KACY14B101Q CY14C101J CY14B101MA CY14E256LACY14B101I CY14B256P CY14B101NA CY14V101LACY14C101I CY14B256Q CY14B104K CY14V101NACY14B101P CY14B512I CY14B104LA CY14V104LACY14E256Q CY14B512P CY14B104M CY14V104NACY14MB064 CY14B512Q CY14B104NA STK11C88CY14MB256 CY14B101Q CY14B108K STK14C88CY14B108M STK16C88 CY14B108L STK15C88
FM23MLD16 FM25H20 FM1808 FM18W08FM22L16 FM25V10 FM18L08 FM1808BFM22LD16 FM25V05 FM24C512 FM28V010FM21L16 FM25V02 FM24L256 FM25L256BFM21LD16 FM25W256 FM24C256 FM25256BFM28V100 FM25V01 FM24V05 FM24V10FM28V020 FM25L512 FM24W256 FM24V01FM24V02
Serial SRAM(串行静态随机存储器)64Kbit~512Kbit
型号 容量 数据结构 总线速度 工作电压 工作温度 封装IP12B512C-TU 512Kb 64K*8 20Mhz 2.7V~3.6V -20-+70 TSSOP-8IP12B512I-TU 512Kb 64K*8 20Mhz 2.7V~3.6V -40-+85 TSSOP-8IP12A512I-TU 512Kb 64K*8 20Mhz 1.5V~1.95V -20-+70 TSSOP-8IP12B256C-TU 256Kb 32K*8 20Mhz 2.7V~3.6V -20-+70 TSSOP-8IP12B256I-TU 256Kb 32K*8 20Mhz 2.7V~3.6V -40-+85 TSSOP-8IP12A256I-TU 256Kb 32K*8 20Mhz 1.5V~1.95V -20-+70 TSSOP-8IP12B128C-TU 128Kb 16K*8 20Mhz 2.7V~3.6V -20-+70 TSSOP-8IP12B64C-TU 256Kb 8K*8 20Mhz 2.7V~3.6V -20-+70 TSSOP-8
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Pseudo SRAM,UtRAM,Cellular RAM 型号及参数如下:Density Voltage Part Name Package -----------------------------------------------------------------------64Mbit 1.8V EMC645SP16AKY-70LF 54BGA64Mbit 1.8V EMC643SP16AJY-70LF 54BGA 64Mbit 1.8V EMC643SP16AKY-70LF 54BGA 64Mbit 1.8V EMC646SP16AJY-70LF 54BGA 64Mbit 1.8V EMC646SP16AKY-70LF 54BGA 64Mbit 1.8V EM7644SP16LP-70LFx 48BGA 64Mbit 1.8V EM7644SP16MP-70LFx 48BGA 64Mbit 1.8V EM7644SP16NP-70LFx 48BGA 64Mbit 1.8V EM7644SP16PP-70LFx 48BGA 64Mbit 1.8V EM7644SP16RP-70LFx 48BGA 64Mbit 1.8V EM7644SP16SP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ALP-70LFx 48BGA 64Mbit 3.0V EM7644SU16AMP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ANP-70LFx 48BGA 64Mbit 3.0V EM7644SU16APP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ARP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ASP-70LFx 48BGA ----------------------------------------------------------------------- 32Mbit 1.8V EMC325SP16AKY-70LF 54BGA 32Mbit 1.8V EMC323SP16AJY-70LF 54BGA 32Mbit 1.8V EMC323SP16AKY-70LF 54BGA 32Mbit 1.8V EMC326SP16AJY-70LF 54BGA 32Mbit 1.8V EMC326SP16AKY-70LF 54BGA 32Mbit 1.8V EM7324SP16LP-70LFx 48BGA 32Mbit 1.8V EM7324SP16MP-70LFx 48BGA 32Mbit 1.8V EM7324SP16NP-70LFx 48BGA 32Mbit 1.8V EM7324SP16PP-70LFx 48BGA 32Mbit 1.8V EM7324SP16RP-70LFx 48BGA 32Mbit 1.8V EM7324SP16SP-70LFx 48BGA 32Mbit 3.0V EM7324SU16LP-70LFx 48BGA 32Mbit 3.0V EM7324SU16MP-70LFx 48BGA 32Mbit 3.0V EM7324SU16NP-70LFx 48BGA 32Mbit 3.0V EM7324SU16PP-70LFx 48BGA 32Mbit 3.0V EM7324SU16RP-70LFx 48BGA 32Mbit 3.0V EM7324SU16SP-70LFx 48BGA ----------------------------------------------------------------------- 16Mbit 1.8V EMC165SP16KY-70LF 54BGA 16Mbit 1.8V EMC163SP16JY-70LF 54BGA 16Mbit 1.8V EMC163SP16KY-70LF 54BGA 16Mbit 1.8V EMC166SP16JY-70LF 54BGA 16Mbit 1.8V EMC166SP16KY-70LF 54BGA 16Mbit 1.8V EM7164SP16LP-70LFx 48BGA 16Mbit 1.8V EM7164SP16MP-70LFx 48BGA 16Mbit 1.8V EM7164SP16NP-70LFx 48BGA 16Mbit 1.8V EM7164SP16PP-70LFx 48BGA 16Mbit 1.8V EM7164SP16RP-70LFx 48BGA 16Mbit 1.8V EM7164SP16SP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BLP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BMP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BNP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BPP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BRP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BSP-70LFx 48BGA
Low power SRAM,Serial SRAM型号及参数如下:
Desity Part Name Org. Package Voltage----------------------------------------------------------------------------8Mbit EM680FV8BU 1Mx8bit 44TSOP2 2.7~3.6V8Mbit EM681FV8BU 1Mx8bit 44TSOP2 2.7~3.6V8Mbit EM680FV8B 1Mx8bit 48BGA 2.7~3.6V8Mbit EM681FV8B 1Mx8bit 48BGA 2.7~3.6V8Mbit EM681FV16BU 512Kx16bit 44TSOP2 2.7~3.6V8Mbit EM680FV16B 512Kx16bit 48BGA 2.7~3.6V8Mbit EM681FV16B 512Kx16bit 48BGA 2.7~3.6V-------------------------------------------------------------------------- 4Mbit EM641FT8S 512Kx8bit 32 STSOP1 5.0V4Mbit EM641FV8FS 512Kx8bit 32 STSOP1 2.7~3.6V4Mbit EM643FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM644FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM645FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM646FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM643FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM644FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM645FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM646FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM640FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM641FV16F 256Kx16bit 48BGA 2.7~3.6V---------------------------------------------------------------------------2Mbit EM620FV8BS 256Kx8bit 32 STSOP1 2.7~3.6V2Mbit EM621FV8BS 256Kx8bit 48BGA 2.7~3.6V2Mbit EM620FV16B 128Kx16bit 32 STSOP1 2.7~3.6V2Mbit EM621FV16B 128Kx16bit 48BGA 2.7~3.6V--------------------------------------------------------------------------- 1Mbit EM610FV8S 128Kx8bit 32 STSOP1 2.7~3.6V1Mbit EM610FV16U 64Kx16bit 44 TSOP2 2.7~3.6V1Mbit EM611FV16U 64Kx16bit 44 TSOP2 2.7~3.6V1Mbit EM610FV8T 128Kx8bit 32 STSOP1 2.7~3.6V
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美国Everspin半导体中国区指定代理 MRAM(非易失性存储器)
我司是美国Everspin半导体中国区指定代理.Everspin MRAM是一种具有革命性的存储器,其原理是利用电子自旋的磁性结构,来提供不会产生损耗的非挥发特性。Everspin MRAM可在集成了硅电路的磁性材料中存储信息,以在单一、可无限使用的组件中提供SRAM的速度以及闪存的非挥发特性。
主要代理MRAM(非易失性存储器),可完全替代SRAM,NvSRAM,F-RAM,EEPROM,BBSRAM,FLASH容量有:
串口:256Kbit,1Mbit,4Mbit
型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR25H256 256Kb 32K*8 40MHz 2.7V~3.6V C,M 8-DFNMR25H10 1Mb 128K*8 40MHz 2.7V~3.6V C,M 8-DFNMR25H40 4Mb 512K*8 40MHz 2.7V~3.6V C,M 8-DFN,8-DIP
并口(*8bit):256Kbit,1Mbit,4Mbit型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR256A08B 256Kb 32K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR0A08B 1Mb 128K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR0D08B 1Mb 128K*8 45ns 2.7V~3.6V,I/O 1.8V Blank 48-BGAMR2A08A 4Mb 512K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR4A08B 16Mb 2Mb*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGA
并口(*16bit):1Mbit,4Mbit,16Mbit型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR0A16A 1Mb 64K*16 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR2A16A 4Mb 256K*16 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR4A16B 16Mb 1Mb*16 35ns 2.7V~3.6V C,M 54TSOP,48-BGA
我司产品可完全替代FRAM(铁电存储器),NV-SRAM,MRAM,如有需要请随时和我们联系. 如以下型号:
CY14B064I CY14ME064 CY14B101KA CY14B108NCY14B064P CY14B101Q CY14B101LA CY14B256KACY14B101Q CY14C101J CY14B101MA CY14E256LACY14B101I CY14B256P CY14B101NA CY14V101LACY14C101I CY14B256Q CY14B104K CY14V101NACY14B101P CY14B512I CY14B104LA CY14V104LACY14E256Q CY14B512P CY14B104M CY14V104NACY14MB064 CY14B512Q CY14B104NA STK11C88CY14MB256 CY14B101Q CY14B108K STK14C88CY14B108M STK16C88 CY14B108L STK15C88
FM23MLD16 FM25H20 FM1808 FM18W08FM22L16 FM25V10 FM18L08 FM1808BFM22LD16 FM25V05 FM24C512 FM28V010FM21L16 FM25V02 FM24L256 FM25L256BFM21LD16 FM25W256 FM24C256 FM25256BFM28V100 FM25V01 FM24V05 FM24V10FM28V020 FM25L512 FM24W256 FM24V01FM24V02
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Serial SRAM(串行静态随机存储器)64Kbit~512Kbit
型号 容量 数据结构 总线速度 工作电压 工作温度 封装IP12B512C-TU 512Kb 64K*8 20Mhz 2.7V~3.6V -20-+70 TSSOP-8IP12B512I-TU 512Kb 64K*8 20Mhz 2.7V~3.6V -40-+85 TSSOP-8IP12A512I-TU 512Kb 64K*8 20Mhz 1.5V~1.95V -20-+70 TSSOP-8IP12B256C-TU 256Kb 32K*8 20Mhz 2.7V~3.6V -20-+70 TSSOP-8IP12B256I-TU 256Kb 32K*8 20Mhz 2.7V~3.6V -40-+85 TSSOP-8IP12A256I-TU 256Kb 32K*8 20Mhz 1.5V~1.95V -20-+70 TSSOP-8IP12B128C-TU 128Kb 16K*8 20Mhz 2.7V~3.6V -20-+70 TSSOP-8IP12B64C-TU 256Kb 8K*8 20Mhz 2.7V~3.6V -20-+70 TSSOP-8
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Low power SRAM,Serial SRAM型号及参数如下:
Desity Part Name Org. Package Voltage----------------------------------------------------------------------------8Mbit EM680FV8BU 1Mx8bit 44TSOP2 2.7~3.6V8Mbit EM681FV8BU 1Mx8bit 44TSOP2 2.7~3.6V8Mbit EM680FV8B 1Mx8bit 48BGA 2.7~3.6V8Mbit EM681FV8B 1Mx8bit 48BGA 2.7~3.6V8Mbit EM681FV16BU 512Kx16bit 44TSOP2 2.7~3.6V8Mbit EM680FV16B 512Kx16bit 48BGA 2.7~3.6V8Mbit EM681FV16B 512Kx16bit 48BGA 2.7~3.6V-------------------------------------------------------------------------- 4Mbit EM641FT8S 512Kx8bit 32 STSOP1 5.0V4Mbit EM641FV8FS 512Kx8bit 32 STSOP1 2.7~3.6V4Mbit EM643FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM644FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM645FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM646FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM643FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM644FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM645FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM646FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM640FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM641FV16F 256Kx16bit 48BGA 2.7~3.6V---------------------------------------------------------------------------2Mbit EM620FV8BS 256Kx8bit 32 STSOP1 2.7~3.6V2Mbit EM621FV8BS 256Kx8bit 48BGA 2.7~3.6V2Mbit EM620FV16B 128Kx16bit 32 STSOP1 2.7~3.6V2Mbit EM621FV16B 128Kx16bit 48BGA 2.7~3.6V--------------------------------------------------------------------------- 1Mbit EM610FV8S 128Kx8bit 32 STSOP1 2.7~3.6V1Mbit EM610FV16U 64Kx16bit 44 TSOP2 2.7~3.6V1Mbit EM611FV16U 64Kx16bit 44 TSOP2 2.7~3.6V1Mbit EM610FV8T 128Kx8bit 32 STSOP1 2.7~3.6V
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Pseudo SRAM,UtRAM,Cellular RAM 型号及参数如下:Density Voltage Part Name Package -----------------------------------------------------------------------64Mbit 1.8V EMC645SP16AKY-70LF 54BGA64Mbit 1.8V EMC643SP16AJY-70LF 54BGA 64Mbit 1.8V EMC643SP16AKY-70LF 54BGA 64Mbit 1.8V EMC646SP16AJY-70LF 54BGA 64Mbit 1.8V EMC646SP16AKY-70LF 54BGA 64Mbit 1.8V EM7644SP16LP-70LFx 48BGA 64Mbit 1.8V EM7644SP16MP-70LFx 48BGA 64Mbit 1.8V EM7644SP16NP-70LFx 48BGA 64Mbit 1.8V EM7644SP16PP-70LFx 48BGA 64Mbit 1.8V EM7644SP16RP-70LFx 48BGA 64Mbit 1.8V EM7644SP16SP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ALP-70LFx 48BGA 64Mbit 3.0V EM7644SU16AMP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ANP-70LFx 48BGA 64Mbit 3.0V EM7644SU16APP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ARP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ASP-70LFx 48BGA ----------------------------------------------------------------------- 32Mbit 1.8V EMC325SP16AKY-70LF 54BGA 32Mbit 1.8V EMC323SP16AJY-70LF 54BGA 32Mbit 1.8V EMC323SP16AKY-70LF 54BGA 32Mbit 1.8V EMC326SP16AJY-70LF 54BGA 32Mbit 1.8V EMC326SP16AKY-70LF 54BGA 32Mbit 1.8V EM7324SP16LP-70LFx 48BGA 32Mbit 1.8V EM7324SP16MP-70LFx 48BGA 32Mbit 1.8V EM7324SP16NP-70LFx 48BGA 32Mbit 1.8V EM7324SP16PP-70LFx 48BGA 32Mbit 1.8V EM7324SP16RP-70LFx 48BGA 32Mbit 1.8V EM7324SP16SP-70LFx 48BGA 32Mbit 3.0V EM7324SU16LP-70LFx 48BGA 32Mbit 3.0V EM7324SU16MP-70LFx 48BGA 32Mbit 3.0V EM7324SU16NP-70LFx 48BGA 32Mbit 3.0V EM7324SU16PP-70LFx 48BGA 32Mbit 3.0V EM7324SU16RP-70LFx 48BGA 32Mbit 3.0V EM7324SU16SP-70LFx 48BGA ----------------------------------------------------------------------- 16Mbit 1.8V EMC165SP16KY-70LF 54BGA 16Mbit 1.8V EMC163SP16JY-70LF 54BGA 16Mbit 1.8V EMC163SP16KY-70LF 54BGA 16Mbit 1.8V EMC166SP16JY-70LF 54BGA 16Mbit 1.8V EMC166SP16KY-70LF 54BGA 16Mbit 1.8V EM7164SP16LP-70LFx 48BGA 16Mbit 1.8V EM7164SP16MP-70LFx 48BGA 16Mbit 1.8V EM7164SP16NP-70LFx 48BGA 16Mbit 1.8V EM7164SP16PP-70LFx 48BGA 16Mbit 1.8V EM7164SP16RP-70LFx 48BGA 16Mbit 1.8V EM7164SP16SP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BLP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BMP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BNP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BPP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BRP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BSP-70LFx 48BGA
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我司是韩国EMLSI和美国Everspin半导体中国区指定代理. 公司主要产品有:1,Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.2,Serial SRAM(串行静态随机存储器)1Mbit~8Mbit.3,PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.4,Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.5,Die(祼片)1Mbit~64Mbit.6.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit7.MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit8.Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit如有需要请随时和我们联系. 我们原厂供货,价格&交期较有优势.谢谢!-----------------------------Julia(徐诺)Ramsun International Limited.英尚国际有限公司M/P:86-13651676808e_mail:julia@sramsun.comQQ:552489939Msn:sramsun@hotmail.comSkype:sramsun
Pseudo SRAM,UtRAM,Cellular RAM 型号及参数如下:Density Voltage Part Name Package -----------------------------------------------------------------------64Mbit 1.8V EMC645SP16AKY-70LF 54BGA64Mbit 1.8V EMC643SP16AJY-70LF 54BGA 64Mbit 1.8V EMC643SP16AKY-70LF 54BGA 64Mbit 1.8V EMC646SP16AJY-70LF 54BGA 64Mbit 1.8V EMC646SP16AKY-70LF 54BGA 64Mbit 1.8V EM7644SP16LP-70LFx 48BGA 64Mbit 1.8V EM7644SP16MP-70LFx 48BGA 64Mbit 1.8V EM7644SP16NP-70LFx 48BGA 64Mbit 1.8V EM7644SP16PP-70LFx 48BGA 64Mbit 1.8V EM7644SP16RP-70LFx 48BGA 64Mbit 1.8V EM7644SP16SP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ALP-70LFx 48BGA 64Mbit 3.0V EM7644SU16AMP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ANP-70LFx 48BGA 64Mbit 3.0V EM7644SU16APP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ARP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ASP-70LFx 48BGA ----------------------------------------------------------------------- 32Mbit 1.8V EMC325SP16AKY-70LF 54BGA 32Mbit 1.8V EMC323SP16AJY-70LF 54BGA 32Mbit 1.8V EMC323SP16AKY-70LF 54BGA 32Mbit 1.8V EMC326SP16AJY-70LF 54BGA 32Mbit 1.8V EMC326SP16AKY-70LF 54BGA 32Mbit 1.8V EM7324SP16LP-70LFx 48BGA 32Mbit 1.8V EM7324SP16MP-70LFx 48BGA 32Mbit 1.8V EM7324SP16NP-70LFx 48BGA 32Mbit 1.8V EM7324SP16PP-70LFx 48BGA 32Mbit 1.8V EM7324SP16RP-70LFx 48BGA 32Mbit 1.8V EM7324SP16SP-70LFx 48BGA 32Mbit 3.0V EM7324SU16LP-70LFx 48BGA 32Mbit 3.0V EM7324SU16MP-70LFx 48BGA 32Mbit 3.0V EM7324SU16NP-70LFx 48BGA 32Mbit 3.0V EM7324SU16PP-70LFx 48BGA 32Mbit 3.0V EM7324SU16RP-70LFx 48BGA 32Mbit 3.0V EM7324SU16SP-70LFx 48BGA ----------------------------------------------------------------------- 16Mbit 1.8V EMC165SP16KY-70LF 54BGA 16Mbit 1.8V EMC163SP16JY-70LF 54BGA 16Mbit 1.8V EMC163SP16KY-70LF 54BGA 16Mbit 1.8V EMC166SP16JY-70LF 54BGA 16Mbit 1.8V EMC166SP16KY-70LF 54BGA 16Mbit 1.8V EM7164SP16LP-70LFx 48BGA 16Mbit 1.8V EM7164SP16MP-70LFx 48BGA 16Mbit 1.8V EM7164SP16NP-70LFx 48BGA 16Mbit 1.8V EM7164SP16PP-70LFx 48BGA 16Mbit 1.8V EM7164SP16RP-70LFx 48BGA 16Mbit 1.8V EM7164SP16SP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BLP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BMP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BNP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BPP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BRP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BSP-70LFx 48BGA
Low power SRAM,Serial SRAM型号及参数如下:
Desity Part Name Org. Package Voltage----------------------------------------------------------------------------8Mbit EM680FV8BU 1Mx8bit 44TSOP2 2.7~3.6V8Mbit EM681FV8BU 1Mx8bit 44TSOP2 2.7~3.6V8Mbit EM680FV8B 1Mx8bit 48BGA 2.7~3.6V8Mbit EM681FV8B 1Mx8bit 48BGA 2.7~3.6V8Mbit EM681FV16BU 512Kx16bit 44TSOP2 2.7~3.6V8Mbit EM680FV16B 512Kx16bit 48BGA 2.7~3.6V8Mbit EM681FV16B 512Kx16bit 48BGA 2.7~3.6V-------------------------------------------------------------------------- 4Mbit EM641FT8S 512Kx8bit 32 STSOP1 5.0V4Mbit EM641FV8FS 512Kx8bit 32 STSOP1 2.7~3.6V4Mbit EM643FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM644FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM645FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM646FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM643FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM644FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM645FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM646FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM640FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM641FV16F 256Kx16bit 48BGA 2.7~3.6V---------------------------------------------------------------------------2Mbit EM620FV8BS 256Kx8bit 32 STSOP1 2.7~3.6V2Mbit EM621FV8BS 256Kx8bit 48BGA 2.7~3.6V2Mbit EM620FV16B 128Kx16bit 32 STSOP1 2.7~3.6V2Mbit EM621FV16B 128Kx16bit 48BGA 2.7~3.6V--------------------------------------------------------------------------- 1Mbit EM610FV8S 128Kx8bit 32 STSOP1 2.7~3.6V1Mbit EM610FV16U 64Kx16bit 44 TSOP2 2.7~3.6V1Mbit EM611FV16U 64Kx16bit 44 TSOP2 2.7~3.6V1Mbit EM610FV8T 128Kx8bit 32 STSOP1 2.7~3.6V
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我司是美国Everspin半导体中国区指定代理.Everspin MRAM是一种具有革命性的存储器,其原理是利用电子自旋的磁性结构,来提供不会产生损耗的非挥发特性。Everspin MRAM可在集成了硅电路的磁性材料中存储信息,以在单一、可无限使用的组件中提供SRAM的速度以及闪存的非挥发特性。
-----------------------------Julia(徐诺)Ramsun International Limited.英尚国际有限公司M/P:86-13651676808e_mail:julia@sramsun.comQQ:552489939Msn:sramsun@hotmail.comSkype:sramsunWeb:www.sramsun.com
主要代理MRAM(非易失性存储器),可完全替代SRAM,NvSRAM,F-RAM,EEPROM,BBSRAM,FLASH容量有:
串口:256Kbit,1Mbit,4Mbit
型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR25H256 256Kb 32K*8 40MHz 2.7V~3.6V C,M 8-DFNMR25H10 1Mb 128K*8 40MHz 2.7V~3.6V C,M 8-DFNMR25H40 4Mb 512K*8 40MHz 2.7V~3.6V C,M 8-DFN,8-DIP
并口(*8bit):256Kbit,1Mbit,4Mbit型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR256A08B 256Kb 32K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR0A08B 1Mb 128K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR0D08B 1Mb 128K*8 45ns 2.7V~3.6V,I/O 1.8V Blank 48-BGAMR2A08A 4Mb 512K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR4A08B 16Mb 2Mb*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGA
并口(*16bit):1Mbit,4Mbit,16Mbit型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR0A16A 1Mb 64K*16 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR2A16A 4Mb 256K*16 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR4A16B 16Mb 1Mb*16 35ns 2.7V~3.6V C,M 54TSOP,48-BGA
我司产品可完全替代FRAM(铁电存储器),NV-SRAM,MRAM,如有需要请随时和我们联系. 如以下型号:
CY14B064I CY14ME064 CY14B101KA CY14B108NCY14B064P CY14B101Q CY14B101LA CY14B256KACY14B101Q CY14C101J CY14B101MA CY14E256LACY14B101I CY14B256P CY14B101NA CY14V101LACY14C101I CY14B256Q CY14B104K CY14V101NACY14B101P CY14B512I CY14B104LA CY14V104LACY14E256Q CY14B512P CY14B104M CY14V104NACY14MB064 CY14B512Q CY14B104NA STK11C88CY14MB256 CY14B101Q CY14B108K STK14C88CY14B108M STK16C88 CY14B108L STK15C88
FM23MLD16 FM25H20 FM1808 FM18W08FM22L16 FM25V10 FM18L08 FM1808BFM22LD16 FM25V05 FM24C512 FM28V010FM21L16 FM25V02 FM24L256 FM25L256BFM21LD16 FM25W256 FM24C256 FM25256BFM28V100 FM25V01 FM24V05 FM24V10FM28V020 FM25L512 FM24W256 FM24V01FM24V02
如有需要请随时和我们联系. 我们原厂供货,价格&交期较有优势.谢谢!
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我司是韩国EMLSI和美国Everspin半导体中国区指定代理. 公司主要产品有:1,Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.2,Serial SRAM(串行静态随机存储器)1Mbit~8Mbit.3,PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.4,Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.5,Die(祼片)1Mbit~64Mbit.6.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit7.MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit8.Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit如有需要请随时和我们联系. 我们原厂供货,价格&交期较有优势.谢谢!-----------------------------Julia(徐诺)Ramsun International Limited.英尚国际有限公司M/P:86-13651676808e_mail:julia@sramsun.comQQ:552489939Msn:sramsun@hotmail.comSkype:sramsun
Pseudo SRAM,UtRAM,Cellular RAM 型号及参数如下:Density Voltage Part Name Package -----------------------------------------------------------------------64Mbit 1.8V EMC645SP16AKY-70LF 54BGA64Mbit 1.8V EMC643SP16AJY-70LF 54BGA 64Mbit 1.8V EMC643SP16AKY-70LF 54BGA 64Mbit 1.8V EMC646SP16AJY-70LF 54BGA 64Mbit 1.8V EMC646SP16AKY-70LF 54BGA 64Mbit 1.8V EM7644SP16LP-70LFx 48BGA 64Mbit 1.8V EM7644SP16MP-70LFx 48BGA 64Mbit 1.8V EM7644SP16NP-70LFx 48BGA 64Mbit 1.8V EM7644SP16PP-70LFx 48BGA 64Mbit 1.8V EM7644SP16RP-70LFx 48BGA 64Mbit 1.8V EM7644SP16SP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ALP-70LFx 48BGA 64Mbit 3.0V EM7644SU16AMP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ANP-70LFx 48BGA 64Mbit 3.0V EM7644SU16APP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ARP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ASP-70LFx 48BGA ----------------------------------------------------------------------- 32Mbit 1.8V EMC325SP16AKY-70LF 54BGA 32Mbit 1.8V EMC323SP16AJY-70LF 54BGA 32Mbit 1.8V EMC323SP16AKY-70LF 54BGA 32Mbit 1.8V EMC326SP16AJY-70LF 54BGA 32Mbit 1.8V EMC326SP16AKY-70LF 54BGA 32Mbit 1.8V EM7324SP16LP-70LFx 48BGA 32Mbit 1.8V EM7324SP16MP-70LFx 48BGA 32Mbit 1.8V EM7324SP16NP-70LFx 48BGA 32Mbit 1.8V EM7324SP16PP-70LFx 48BGA 32Mbit 1.8V EM7324SP16RP-70LFx 48BGA 32Mbit 1.8V EM7324SP16SP-70LFx 48BGA 32Mbit 3.0V EM7324SU16LP-70LFx 48BGA 32Mbit 3.0V EM7324SU16MP-70LFx 48BGA 32Mbit 3.0V EM7324SU16NP-70LFx 48BGA 32Mbit 3.0V EM7324SU16PP-70LFx 48BGA 32Mbit 3.0V EM7324SU16RP-70LFx 48BGA 32Mbit 3.0V EM7324SU16SP-70LFx 48BGA ----------------------------------------------------------------------- 16Mbit 1.8V EMC165SP16KY-70LF 54BGA 16Mbit 1.8V EMC163SP16JY-70LF 54BGA 16Mbit 1.8V EMC163SP16KY-70LF 54BGA 16Mbit 1.8V EMC166SP16JY-70LF 54BGA 16Mbit 1.8V EMC166SP16KY-70LF 54BGA 16Mbit 1.8V EM7164SP16LP-70LFx 48BGA 16Mbit 1.8V EM7164SP16MP-70LFx 48BGA 16Mbit 1.8V EM7164SP16NP-70LFx 48BGA 16Mbit 1.8V EM7164SP16PP-70LFx 48BGA 16Mbit 1.8V EM7164SP16RP-70LFx 48BGA 16Mbit 1.8V EM7164SP16SP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BLP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BMP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BNP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BPP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BRP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BSP-70LFx 48BGA
Low power SRAM,Serial SRAM型号及参数如下:
Desity Part Name Org. Package Voltage----------------------------------------------------------------------------8Mbit EM680FV8BU 1Mx8bit 44TSOP2 2.7~3.6V8Mbit EM681FV8BU 1Mx8bit 44TSOP2 2.7~3.6V8Mbit EM680FV8B 1Mx8bit 48BGA 2.7~3.6V8Mbit EM681FV8B 1Mx8bit 48BGA 2.7~3.6V8Mbit EM681FV16BU 512Kx16bit 44TSOP2 2.7~3.6V8Mbit EM680FV16B 512Kx16bit 48BGA 2.7~3.6V8Mbit EM681FV16B 512Kx16bit 48BGA 2.7~3.6V-------------------------------------------------------------------------- 4Mbit EM641FT8S 512Kx8bit 32 STSOP1 5.0V4Mbit EM641FV8FS 512Kx8bit 32 STSOP1 2.7~3.6V4Mbit EM643FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM644FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM645FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM646FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM643FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM644FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM645FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM646FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM640FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM641FV16F 256Kx16bit 48BGA 2.7~3.6V---------------------------------------------------------------------------2Mbit EM620FV8BS 256Kx8bit 32 STSOP1 2.7~3.6V2Mbit EM621FV8BS 256Kx8bit 48BGA 2.7~3.6V2Mbit EM620FV16B 128Kx16bit 32 STSOP1 2.7~3.6V2Mbit EM621FV16B 128Kx16bit 48BGA 2.7~3.6V--------------------------------------------------------------------------- 1Mbit EM610FV8S 128Kx8bit 32 STSOP1 2.7~3.6V1Mbit EM610FV16U 64Kx16bit 44 TSOP2 2.7~3.6V1Mbit EM611FV16U 64Kx16bit 44 TSOP2 2.7~3.6V1Mbit EM610FV8T 128Kx8bit 32 STSOP1 2.7~3.6V
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我司是韩国EMLSI和美国Everspin半导体中国区指定代理. 公司主要产品有:1,Low power SRAM (低功耗静态随机存储器)1Mbit~8Mbit.2,Serial SRAM(串行静态随机存储器)1Mbit~8Mbit.3,PSRAM[Pseudo SRAM,UtRAM] (虚拟静态随机存储器)4Mbit~64Mbit.4,Cellular RAM(伪静态随机存储器)4Mbit~64Mbit.5,Die(祼片)1Mbit~64Mbit.6.NvSRAM,F-RAM,MRAM(非易失性存储器)256Kbit~1Gbit7.MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit8.Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit如有需要请随时和我们联系. 我们原厂供货,价格&交期较有优势.谢谢!-----------------------------Julia(徐诺)Ramsun International Limited.英尚国际有限公司M/P:86-13651676808e_mail:julia@sramsun.comQQ:552489939Msn:sramsun@hotmail.comSkype:sramsun
Pseudo SRAM,UtRAM,Cellular RAM 型号及参数如下:Density Voltage Part Name Package -----------------------------------------------------------------------64Mbit 1.8V EMC645SP16AKY-70LF 54BGA64Mbit 1.8V EMC643SP16AJY-70LF 54BGA 64Mbit 1.8V EMC643SP16AKY-70LF 54BGA 64Mbit 1.8V EMC646SP16AJY-70LF 54BGA 64Mbit 1.8V EMC646SP16AKY-70LF 54BGA 64Mbit 1.8V EM7644SP16LP-70LFx 48BGA 64Mbit 1.8V EM7644SP16MP-70LFx 48BGA 64Mbit 1.8V EM7644SP16NP-70LFx 48BGA 64Mbit 1.8V EM7644SP16PP-70LFx 48BGA 64Mbit 1.8V EM7644SP16RP-70LFx 48BGA 64Mbit 1.8V EM7644SP16SP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ALP-70LFx 48BGA 64Mbit 3.0V EM7644SU16AMP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ANP-70LFx 48BGA 64Mbit 3.0V EM7644SU16APP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ARP-70LFx 48BGA 64Mbit 3.0V EM7644SU16ASP-70LFx 48BGA ----------------------------------------------------------------------- 32Mbit 1.8V EMC325SP16AKY-70LF 54BGA 32Mbit 1.8V EMC323SP16AJY-70LF 54BGA 32Mbit 1.8V EMC323SP16AKY-70LF 54BGA 32Mbit 1.8V EMC326SP16AJY-70LF 54BGA 32Mbit 1.8V EMC326SP16AKY-70LF 54BGA 32Mbit 1.8V EM7324SP16LP-70LFx 48BGA 32Mbit 1.8V EM7324SP16MP-70LFx 48BGA 32Mbit 1.8V EM7324SP16NP-70LFx 48BGA 32Mbit 1.8V EM7324SP16PP-70LFx 48BGA 32Mbit 1.8V EM7324SP16RP-70LFx 48BGA 32Mbit 1.8V EM7324SP16SP-70LFx 48BGA 32Mbit 3.0V EM7324SU16LP-70LFx 48BGA 32Mbit 3.0V EM7324SU16MP-70LFx 48BGA 32Mbit 3.0V EM7324SU16NP-70LFx 48BGA 32Mbit 3.0V EM7324SU16PP-70LFx 48BGA 32Mbit 3.0V EM7324SU16RP-70LFx 48BGA 32Mbit 3.0V EM7324SU16SP-70LFx 48BGA ----------------------------------------------------------------------- 16Mbit 1.8V EMC165SP16KY-70LF 54BGA 16Mbit 1.8V EMC163SP16JY-70LF 54BGA 16Mbit 1.8V EMC163SP16KY-70LF 54BGA 16Mbit 1.8V EMC166SP16JY-70LF 54BGA 16Mbit 1.8V EMC166SP16KY-70LF 54BGA 16Mbit 1.8V EM7164SP16LP-70LFx 48BGA 16Mbit 1.8V EM7164SP16MP-70LFx 48BGA 16Mbit 1.8V EM7164SP16NP-70LFx 48BGA 16Mbit 1.8V EM7164SP16PP-70LFx 48BGA 16Mbit 1.8V EM7164SP16RP-70LFx 48BGA 16Mbit 1.8V EM7164SP16SP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BLP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BMP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BNP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BPP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BRP-70LFx 48BGA 16Mbit 3.0V EM7164SU16BSP-70LFx 48BGA
Low power SRAM,Serial SRAM型号及参数如下:
Desity Part Name Org. Package Voltage----------------------------------------------------------------------------8Mbit EM680FV8BU 1Mx8bit 44TSOP2 2.7~3.6V8Mbit EM681FV8BU 1Mx8bit 44TSOP2 2.7~3.6V8Mbit EM680FV8B 1Mx8bit 48BGA 2.7~3.6V8Mbit EM681FV8B 1Mx8bit 48BGA 2.7~3.6V8Mbit EM681FV16BU 512Kx16bit 44TSOP2 2.7~3.6V8Mbit EM680FV16B 512Kx16bit 48BGA 2.7~3.6V8Mbit EM681FV16B 512Kx16bit 48BGA 2.7~3.6V-------------------------------------------------------------------------- 4Mbit EM641FT8S 512Kx8bit 32 STSOP1 5.0V4Mbit EM641FV8FS 512Kx8bit 32 STSOP1 2.7~3.6V4Mbit EM643FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM644FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM645FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM646FV16FU 256Kx16bit 44 TSOP2 2.7~3.6V4Mbit EM643FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM644FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM645FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM646FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM640FV16F 256Kx16bit 48BGA 2.7~3.6V4Mbit EM641FV16F 256Kx16bit 48BGA 2.7~3.6V---------------------------------------------------------------------------2Mbit EM620FV8BS 256Kx8bit 32 STSOP1 2.7~3.6V2Mbit EM621FV8BS 256Kx8bit 48BGA 2.7~3.6V2Mbit EM620FV16B 128Kx16bit 32 STSOP1 2.7~3.6V2Mbit EM621FV16B 128Kx16bit 48BGA 2.7~3.6V--------------------------------------------------------------------------- 1Mbit EM610FV8S 128Kx8bit 32 STSOP1 2.7~3.6V1Mbit EM610FV16U 64Kx16bit 44 TSOP2 2.7~3.6V1Mbit EM611FV16U 64Kx16bit 44 TSOP2 2.7~3.6V1Mbit EM610FV8T 128Kx8bit 32 STSOP1 2.7~3.6V
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我司是美国Everspin半导体中国区指定代理.Everspin MRAM是一种具有革命性的存储器,其原理是利用电子自旋的磁性结构,来提供不会产生损耗的非挥发特性。Everspin MRAM可在集成了硅电路的磁性材料中存储信息,以在单一、可无限使用的组件中提供SRAM的速度以及闪存的非挥发特性。
-----------------------------Julia(徐诺)Ramsun International Limited.英尚国际有限公司M/P:86-13651676808e_mail:julia@sramsun.comQQ:552489939Msn:sramsun@hotmail.comSkype:sramsunWeb:www.sramsun.com
主要代理MRAM(非易失性存储器),可完全替代SRAM,NvSRAM,F-RAM,EEPROM,BBSRAM,FLASH容量有:
串口:256Kbit,1Mbit,4Mbit
型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR25H256 256Kb 32K*8 40MHz 2.7V~3.6V C,M 8-DFNMR25H10 1Mb 128K*8 40MHz 2.7V~3.6V C,M 8-DFNMR25H40 4Mb 512K*8 40MHz 2.7V~3.6V C,M 8-DFN,8-DIP
并口(*8bit):256Kbit,1Mbit,4Mbit型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR256A08B 256Kb 32K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR0A08B 1Mb 128K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR0D08B 1Mb 128K*8 45ns 2.7V~3.6V,I/O 1.8V Blank 48-BGAMR2A08A 4Mb 512K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR4A08B 16Mb 2Mb*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGA
并口(*16bit):1Mbit,4Mbit,16Mbit型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR0A16A 1Mb 64K*16 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR2A16A 4Mb 256K*16 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR4A16B 16Mb 1Mb*16 35ns 2.7V~3.6V C,M 54TSOP,48-BGA
我司产品可完全替代FRAM(铁电存储器),NV-SRAM,MRAM,如有需要请随时和我们联系. 如以下型号:
CY14B064I CY14ME064 CY14B101KA CY14B108NCY14B064P CY14B101Q CY14B101LA CY14B256KACY14B101Q CY14C101J CY14B101MA CY14E256LACY14B101I CY14B256P CY14B101NA CY14V101LACY14C101I CY14B256Q CY14B104K CY14V101NACY14B101P CY14B512I CY14B104LA CY14V104LACY14E256Q CY14B512P CY14B104M CY14V104NACY14MB064 CY14B512Q CY14B104NA STK11C88CY14MB256 CY14B101Q CY14B108K STK14C88CY14B108M STK16C88 CY14B108L STK15C88
FM23MLD16 FM25H20 FM1808 FM18W08FM22L16 FM25V10 FM18L08 FM1808BFM22LD16 FM25V05 FM24C512 FM28V010FM21L16 FM25V02 FM24L256 FM25L256BFM21LD16 FM25W256 FM24C256 FM25256BFM28V100 FM25V01 FM24V05 FM24V10FM28V020 FM25L512 FM24W256 FM24V01FM24V02
如有需要请随时和我们联系. 我们原厂供货,价格&交期较有优势.谢谢!
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美国Everspin半导体中国区指定代理 MRAM(非易失性存储器)
我司是美国Everspin半导体中国区指定代理.Everspin MRAM是一种具有革命性的存储器,其原理是利用电子自旋的磁性结构,来提供不会产生损耗的非挥发特性。Everspin MRAM可在集成了硅电路的磁性材料中存储信息,以在单一、可无限使用的组件中提供SRAM的速度以及闪存的非挥发特性。 主要代理MRAM(非易失性存储器),可完全替代SRAM,NvSRAM,F-RAM,EEPROM,BBSRAM,FLASH容量有:
串口:256Kbit,1Mbit,4Mbit
型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR25H256 256Kb 32K*8 40MHz 2.7V~3.6V C,M 8-DFNMR25H10 1Mb 128K*8 40MHz 2.7V~3.6V C,M 8-DFNMR25H40 4Mb 512K*8 40MHz 2.7V~3.6V C,M 8-DFN,8-DIP
并口(*8bit):256Kbit,1Mbit,4Mbit型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR256A08B 256Kb 32K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR0A08B 1Mb 128K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR0D08B 1Mb 128K*8 45ns 2.7V~3.6V,I/O 1.8V Blank 48-BGAMR2A08A 4Mb 512K*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR4A08B 16Mb 2Mb*8 35ns 2.7V~3.6V C,M 44TSOP,48-BGA
并口(*16bit):1Mbit,4Mbit,16Mbit型号 容量 数据结构 总线速度 工作电压 工作温度 封装MR0A16A 1Mb 64K*16 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR2A16A 4Mb 256K*16 35ns 2.7V~3.6V C,M 44TSOP,48-BGAMR4A16B 16Mb 1Mb*16 35ns 2.7V~3.6V C,M 54TSOP,48-BGA
如有需要请随时和我们联系. 我们原厂供货,价格&交期较有优势.谢谢!-----------------------------Julia(徐诺)Ramsun International Limited.英尚国际有限公司M/P:86-13651676808e_mail:julia@sramsun.comQQ:552489939Msn:sramsun@hotmail.comSkype:sramsunWeb:www.sramsun.com
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印象里,STM8S中的BEEP还需要配置一下Option Byte,可以通过STVP来修改(烧写)Option Byte
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不提倡这么用,很容易出问题的
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关于中断的问题,我不认为是Bug,也许像你说的,与指令流水线有关。
因为从来都是先清中断标志再处理中断,所以没有人注意到这个(当然还需要验证)。
请问为什么一定要处理完中断在清中断标志呢?
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楼主的结帖率很低,可能很多人不想回帖吧,或者说你问的东西大家都不明白。。。
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顶,正是想知道的问题
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不管是在一个还是多个通道上,问题的关键是,使用更新中断,使你可以准确地同步输出的信号。
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好~顶~
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父设备,子设备???你创造的名词?